Short Bio
I am Senior Device Physicist at Quantum Solutions and Visiting Scientist in the Division of Electrical Engineering at the University of Cambridge. I have also been Lecturer in the Department of Electronic and Electrical Engineering at University College London. My long-term ambition is to “democratize superhuman vision” by realising high-performance yet low cost photodetectors and image sensors which can effectively capture photon beyond visible light, particularly in infrared (IR) regimes where tremendous applications in sensing and imaging lie. My approach is to use colloidal quantum dots (QD) which offer not only superior optoelectronic properties but also scalable since it does not require deep vacuum process and precise lattice-matching to size-limited substrates (unlike in conventional semiconductors). In Quantum Solutions, I have taken a leading role in developing first commercial high-operating temperature QD mid-wave IR image sensors.
Before this, I was a Postdoctoral Research Associate in Cambridge Centre for Gallium Nitride at the University of Cambridge - jointly affiliated with Robinson College, during 2022-2023. During my postdoc, I worked with Prof. Rachel Oliver on novel optoelectronic devices based on QD-infiltrated porous semiconductors. I pioneered the development of nano-printing processes to integrate QD into porous semiconducting matrices. I obtained my PhD in Semiconductor Engineering from McGill University (FRQNT PhD Fellow-ranked 1st) in 2022, under Prof. Nathaniel Quitoriano, in collaboration with Quantum and Nanotechnologies Research Centre, National Research Council Canada (NRC). During my PhD, I established fundamental understanding on the metal-catalyzed lateral epitaxy of dissimilar semiconductors, a novel technique that allows integration of various semiconductor devices on Si platforms. I received BEng in Applied Physics (with specialization on Quantum Electronics) from Nagoya University, in 2019, fully funded by Monbukagakusho Scholarship. During my B.Eng. thesis project under Prof. Osamu Nakatsuka, I demonstrated resonant tunneling diodes (RTDs) based on novel epitaxial GeSn/GeSiSn quantum well heterostructures for the first time.
Research Keywords:
Semiconductor Devices
Quantum Electronics
Nanotechnology
